power transistors 1 publication date: february 2003 sjd00039aed 2SB1063 silicon pnp triple diffusion planar type for high power amplification complementary to 2sd1499 features ? extremely satisfactory linearity of the forward current transfer ratio h fe ? wide safe operation area ? high transition frequency f t ? full-pack package which can be installed to the heat sink with one screw absolute maximum ratings t c = 25 c electrical characteristics t c = 25 c 3 c unit: mm parameter symbol conditions min typ max unit base-emitter voltage v be v ce = ? 5 v, i c = ? 3 a ? 1.8 v collector-base cutoff current (emitter open) i cbo v cb = ? 100 v, i e = 0 ? 50 a emitter-base cutoff current (collector open) i ebo v eb = ? 3 v, i c = 0 ? 50 a forward current transfer ratio h fe1 v ce = ? 5 v, i c = ? 20 ma 20 ? h fe2 * v ce = ? 5 v, i c = ? 1 a 40 200 h fe3 v ce = ? 5 v, i c = ? 3 a 20 collector-emitter saturation voltage v ce(sat) i c = ? 3 a, i b = ? 0.3 a ? 2v transition frequency f t v ce = ? 5 v, i c = ? 0.5 a, f = 1 mhz 20 mhz collector output capacitance c ob v cb = ? 10 v, i e = 0, f = 1 mhz 170 pf (common base, input open circuited) parameter symbol rating unit collector-base voltage (emitter open) v cbo ? 100 v collector-emitter voltage (base open) v ceo ? 100 v emitter-base voltage (collector open) v ebo ? 5v collector current i c ? 5a peak collector current i cp ? 8a collector power dissipation p c 40 w t a = 25 c 2.0 junction temperature t j 150 c storage temperature t stg ? 55 to + 150 c note) 1. measuring methods are based on japanese industrial standard jis c 7030 measuring methods for transistors. 2. * : rank classification rank r q p h fe2 40 to 80 60 to 120 100 to 200 10.0 0.2 5.5 0.2 7.5 0.2 16.7 0.3 0.7 0.1 14.0 0.5 solder dip (4.0) 0.5 +0.2 ?0.1 1.4 0.1 1.3 0.2 0.8 0.1 2.54 0.3 5.08 0.5 2 13 2.7 0.2 4.2 0.2 4.2 0.2 3.1 0.1 1: base 2: collector 3: emitter eiaj: sc-67 to-220f-a1 package
2SB1063 2 sjd00039aed v ce(sat) ? i c h fe ? i c f t ? i c p c ? t a i c ? v ce i c ? v be safe operation area r th ? t 0 0 160 40 120 80 20 60 40 80 collector power dissipation p c (w) ambient temperature t a ( c) (1)t c =ta (2)with a 100 100 2mm al heat sink (3)without heat sink (p c =2.0w) (1) (2) (3) 0 ? 6 ? 5 ? 4 ? 3 ? 2 ? 1 0 ? 12 ? 2 ? 10 ? 4 ? 8 ? 6 t c =25?c ?0ma ?0ma ?0ma ?0ma ?0ma ?0ma ?0ma ?ma i b =?0ma collector current i c (a) collector-emitter voltage v ce (v) 0 0 ? 2.0 ? 1.6 ? 1.2 ? 0.8 ? 0.4 ? 6 ? 5 ? 4 ? 3 ? 2 ? 1 base-emitter voltage v be (v) collector current i c (a) v ce =?v t c =100?c ?5?c 25?c ? 0.01 ? 0.01 ? 0.1 ? 1 ? 10 ? 100 ? 0.1 ? 1 ? 10 collector-emitter saturation voltage v ce(sat) (v) collector current i c (a) i c /i b =10 25?c t c =100?c ?5?c ? 0.01 ? 0.1 ? 1 ? 10 1 10 forward current transfer ratio h fe collector current i c (a) 10 2 10 4 10 3 v ce =?5v t c =100?c 25?c ?25?c ? 0.01 ? 0.1 ? 1 ? 10 0.1 1 10 100 1 000 collector current i c (a) transition frequency f t (mhz) v ce =?v f=1mhz t c =25?c ? 0.01 ? 1 ? 0.1 ? 1 ? 10 ? 100 ? 10 ? 100 ? 1 000 t=10ms t=1ms i cp i c non repetitive pulse t c =25?c dc collector current i c (a) collector-emitter voltage v ce (v) 10 ? 2 10 ? 1 1 10 10 2 10 ? 3 10 4 10 3 10 2 10 1 10 ? 1 10 ? 2 time t (s) thermal resistance r th ( c/w) (1) (2) (1)without heat sink (2)with a 100 100 2mm al heat sink
request for your special attention and precautions in using the technical information and semiconductors described in this material (1) an export permit needs to be obtained from the competent authorities of the japanese government if any of the products or technologies described in this material and controlled under the "foreign exchange and foreign trade law" is to be exported or taken out of japan. (2) the technical information described in this material is limited to showing representative characteris- tics and applied circuits examples of the products. it neither warrants non-infringement of intellec- tual property right or any other rights owned by our company or a third party, nor grants any license. (3) we are not liable for the infringement of rights owned by a third party arising out of the use of the product or technologies as described in this material. (4) the products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instru- ments and household appliances). consult our sales staff in advance for information on the following applications: ? special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. ? any applications other than the standard applications intended. (5) the products and product specifications described in this material are subject to change without notice for modification and/or improvement. at the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date product standards in advance to make sure that the latest specifications satisfy your requirements. (6) when designing your equipment, comply with the guaranteed values, in particular those of maxi- mum rating, the range of operating power supply voltage, and heat radiation characteristics. other- wise, we will not be liable for any defect which may arise later in your equipment. even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) when using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) this material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of matsushita electric industrial co., ltd. 2002 jul
|
